L. Buzi

According to our database, L. Buzi authored at least 4 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications.

Wei-Chih Chien, J. X. Zheng, C. W. Yeh, Lynne M. Gignac, H. Y. Cheng, Z. L. Liu, Alexander Grun, C. L. Sung, E. K. Lai, S. Cheng, C. W. Cheng, L. Buzi, A. Ray, Douglas M. Bishop, Robert L. Bruce, M. J. BrightSky, H. L. Lung

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications.

Wei-Chih Chien, E. K. Lai, L. Buzi, C. W. Cheng, C. W. Yeh, A. Ray, Lynne M. Gignac, N. Gong, Huai-Yu Cheng, Alexander Grun, D. Y. Lee, W. Kim, A. Majumdar, Douglas M. Bishop, Robert L. Bruce, D. Daudelin, H. Y. Ho, M. J. BrightSky, H. L. Lung

Proceedings of the IEEE International Memory Workshop, 2023

2022

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.

C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme.

Wei-Chih Chien, Lynne M. Gignac, Y. C. Chou, C. H. Yang, N. Gong, H. Y. Ho, C. W. Yeh, H. Y. Cheng, W. Kim, I. T. Kuo, E. K. Lai, C. W. Cheng, L. Buzi, A. Ray, Chia-Sheng Hsu, Robert L. Bruce, Matthew BrightSky, H. L. Lung

Proceedings of the IEEE International Reliability Physics Symposium, 2022