L.-Å. Ragnarsson

According to our database, L.-Å. Ragnarsson authored at least 15 papers between 2005 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics.

Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt

CoRR, 2024

2023

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.

Hiroaki Arimura, S. Brus, Jacopo Franco, Yusuke Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, Nicolas Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

2021

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.

Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer

Proceedings of the International Conference on IC Design and Technology, 2021

2016

Towards high performance sub-10nm finW bulk FinFET technology.

Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Modeling FinFET metal gate stack resistance for 14nm node and beyond.

Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Silicon LEDs in FinFET technology.

Giulia Piccolo, Piet I. Kuindersma, Lars-Åke Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, Jurriaan Schmitz

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.

Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken

Microelectron. Reliab., 2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.

Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Reliability of thin ZrO₂ gate dielectric layers.

Robert O'Connor, Greg Hughes, Thomas Kauerauf, Lars-Åke Ragnarsson

Microelectron. Reliab., 2011

2009

Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

Thomas Chiarella, Liesbeth Witters, Abdelkarim Mercha, Christoph Kerner, Rok Dittrich, Michal Rakowski, Claude Ortolland, Lars-Åke Ragnarsson, Bertrand Parvais, An De Keersgieter, Stefan Kubicek, Augusto Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, Philippe Absil, S. Biesemans, Thomas Y. Hoffmann

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2005

Performance improvement of self-aligned HfO₂/TaN and SiON/TaN nMOS transistors.

Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen

Microelectron. Reliab., 2005

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.

G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer

Microelectron. Reliab., 2005

Potential remedies for the V_T/V_fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey.

W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes

Microelectron. Reliab., 2005