Kwangwon Kim

According to our database, Kwangwon Kim authored at least 2 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput.

Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2019

A 512Gb 3-bit/Cell 3D 6^th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Wontae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung

Proceedings of the IEEE International Solid- State Circuits Conference, 2019