Kunfeng Zhu

According to our database, Kunfeng Zhu authored at least 5 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier.

Peijian Zhang, Kunfeng Zhu, Wensuo Chen

IEICE Trans. Electron., January, 2024

Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position.

Yuying Wang, Zhengyuan Zhang, Peng Jian, Pengfei Liao, Aohang Zhang, Kunfeng Zhu, Wensuo Chen

Microelectron. J., 2024

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance.

Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li

Microelectron. J., 2024

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation.

Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo

IEEE Access, 2024

2017

A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels.

Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong

Microelectron. Reliab., 2017