Kuei-Shu Chang-Liao
Orcid: 0000-0003-1362-7892
According to our database1,
Kuei-Shu Chang-Liao
authored at least 9 papers
between 2007 and 2022.
Collaborative distances:
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Bibliography
2022
2018
SiO<sub>2</sub> tunneling and Si<sub>3</sub>N<sub>4</sub>/HfO<sub>2</sub> trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices.
Microelectron. Reliab., 2018
2017
Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer.
Microelectron. Reliab., 2017
2015
Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H<sub>2</sub>.
Microelectron. Reliab., 2015
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature.
Microelectron. Reliab., 2015
2011
Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs.
Microelectron. Reliab., 2011
2009
Employing vertical dielectric layers to improve the operation performance of flash memory devices.
Microelectron. Reliab., 2009
2007
Performance and reliability improvement of flash device by a novel programming method.
Microelectron. Reliab., 2007