Kuang Sheng

According to our database, Kuang Sheng authored at least 12 papers between 2000 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations.

Shahid Makhdoom, Na Ren, Ce Wang, Chaobiao Lin, Yiding Wu, Kuang Sheng

IEEE Access, 2024

2023

An efficient mixed attention module.

Kuang Sheng, Pinghua Chen

IET Comput. Vis., June, 2023

2019

Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter: A Review.

Shuai Shao, Hui Chen, Xinke Wu, Junming Zhang, Kuang Sheng

IEEE Access, 2019

A Resonant DC-DC Converter with Modular Rectifier for High Voltage Gain and Wide Output Voltage Range Applications.

Weiwen Ye, Wentao Cui, Shuai Shao, Junming Zhang, Kuang Sheng

Proceedings of the IECON 2019, 2019

2016

Charge trapping related channel modulation instability in P-GaN gate HEMTs.

Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng

Microelectron. Reliab., 2016

2015

Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT.

Cen Tang, Gang Xie, Kuang Sheng

Microelectron. Reliab., 2015

2013

High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure.

Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng

Microelectron. Reliab., 2013

Electronic system hardware exploration in an inverted classroom.

James Barker, Julia Cline, Kuang Sheng, Steven Bibyk

Proceedings of the IEEE 56th International Midwest Symposium on Circuits and Systems, 2013

2012

Parameters evaluation for SiC-JFET modeling considering non-uniformity by fabrication.

Chaofeng Cai, Yilong Qu, Qing Guo, Wang Tao, Kuang Sheng

Proceedings of the 21st IEEE International Symposium on Industrial Electronics, 2012

2008

Current Status and Future Prospects of SiC Power JFETs and ICs.

Jian H. Zhao, Kuang Sheng, Yongxi Zhang, Ming Su

IEICE Trans. Electron., 2008

2001

A composite soft-switching inverter configuration with unipolar pulsewidth modulation control.

Xiangning He, Kuang Sheng, Barry W. Williams, Zhaoming Qian, Stephen J. Finney

IEEE Trans. Ind. Electron., 2001

2000

Thermal stability of IGBT high-frequency operation.

Kuang Sheng, Stephen J. Finney, Barry W. Williams

IEEE Trans. Ind. Electron., 2000