Konstantin Bourdelle

According to our database, Konstantin Bourdelle authored at least 6 papers between 2009 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform.

Shankar Kumar Selvaraja, Peter De Heyn, Gustaf Winroth, Patrick Ong, Guy Lepage, Celine Cailler, Arnaud Rigny, Konstantin K. Bourdelle, Wim Bogaerts, Dries Van Thourhout, Joris Van Campenhout, Philippe Absil

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.

Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs.

Simon Richter, Svetlana A. Vitusevich, Sergii Pud, Jing Li, Lars Knoll, Stefan Trellenkamp, Anna Schäfer, Steffi Lenk, Qing-Tai Zhao, Andreas Offenhäusser, Siegfried Mantl, Konstantin K. Bourdelle

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions.

Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, Siegfried Mantl

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit.

Olivier Thomas, Jean-Philippe Noel, Claire Fenouillet-Béranger, Marie-Anne Jaud, J. Dura, P. Perreau, Frédéric Boeuf, François Andrieu, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Andrei Vladimirescu, Amara Amara

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009