Konrad Seidel
According to our database1,
Konrad Seidel
authored at least 24 papers
between 2004 and 2024.
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Bibliography
2024
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.
Adv. Intell. Syst., April, 2024
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.
Proceedings of the IEEE International Memory Workshop, 2024
Proceedings of the Device Research Conference, 2024
2023
Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.
Adv. Intell. Syst., June, 2023
Proceedings of the IEEE International Memory Workshop, 2023
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.
Proceedings of the IEEE International Memory Workshop, 2023
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress.
Proceedings of the IEEE International Memory Workshop, 2023
2022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the 19th International SoC Design Conference, 2022
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.
Proceedings of the IEEE International Memory Workshop, 2022
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.
Proceedings of the IEEE International Memory Workshop, 2022
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application.
Proceedings of the IEEE International Memory Workshop, 2021
2020
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019
2016
Proceedings of the International Conference on IC Design and Technology, 2016
2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014
2013
High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures.
Proceedings of 2013 International Conference on IC Design & Technology, 2013
2004
Proceedings of the Second International Workshop on Mobility Management & Wireless Access Protocols, 2004