Koji Shibutani

According to our database, Koji Shibutani authored at least 11 papers between 2012 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM.

Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani, Kazutoshi Kobayashi

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2021

2019

Experimental Implementation of 8.9Kgate Stress Monitor in 28nm MCU Along with Safety Software Library for IoT Device Maintenance.

Kan Takeuchi, Masaki Shimada, Shinya Konishi, Daisuke Oshida, Naoya Ota, Takashi Yasumasu, Koji Shibutani, Tomohiro Iwashita, Tetsuya Kokubun, Fumio Tsuchiya

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process.

Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Wear-out stress monitor utilising temperature and voltage sensitive ring oscillators.

Kan Takeuchi, Masaki Shimada, Takeshi Okagaki, Koji Shibutani, Koji Nii, Fumio Tsuchiya

IET Circuits Devices Syst., 2018

Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET.

Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process.

Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017

NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator.

Mitsuhiko Igarashi, Yoshio Takazawa, Yasumasa Tsukamoto, Kan Takeuchi, Koji Shibutani

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017

2016

FEOL/BEOL wear-out estimator using stress-to-frequency conversion of voltage/temperature-sensitive ring oscillators for 28nm automotive MCUs.

Kan Takeuchi, Masaki Shimada, Takeshi Okagaki, Koji Shibutani, Koji Nii, Fumio Tsuchiya

Proceedings of the ESSCIRC Conference 2016: 42^nd European Solid-State Circuits Conference, 2016

2015

An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology.

Mitsuhiko Igarashi, Kan Takeuchi, Takeshi Okagaki, Koji Shibutani, Hiroaki Matsushita, Koji Nii

Proceedings of the ESSCIRC Conference 2015, 2015

2014

Assessment of reliability impact on GHz processors with moderate overdrive.

Mitsuhiko Igarashi, Hideki Aono, Hideaki Abe, Koji Shibutani, Kan Takeuchi

Proceedings of the Fifteenth International Symposium on Quality Electronic Design, 2014

2012

A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology.

Kazuki Fukuoka, Ryo Mori, A. Kato, Motoshige Igarashi, Koji Shibutani, T. Yamaki, Shinji Tanaka, Koji Nii, Sadayuki Morita, Takao Koike, Noriaki Sakamoto

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012