Klaus Aufinger

Orcid: 0000-0002-7884-7987

According to our database1, Klaus Aufinger authored at least 34 papers between 2001 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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On csauthors.net:

Bibliography

2024
A Ku-Band SiGe: C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023
A 117.5-155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler.
IEEE J. Solid State Circuits, September, 2023

A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band.
Proc. IEEE, March, 2023

A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

A High Linearity SiGe D-Band Diode Ring Mixer.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
A Full D-band Multi-Gbit RF-DAC in 90 nm SiGe BiCMOS based on Passive Vector Aggregation.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

A SiGe D-Band x12 Frequency Multiplier with Gilbert Cell-Based Tripler.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
A Switchable, Passively Tuneable 28 GHz to 39 GHz Upconversion Link for a 5G Repeater using a Broadside Coupler and Analog Predistortion in a 130 nm BiCMOS Technology.
Proceedings of the 18th IEEE International New Circuits and Systems Conference, 2020

A 28 GHz Highly Accurate Phase- and Gain-Steering Transmitter Frontend for 5G Phased-Array Applications.
Proceedings of the 63rd IEEE International Midwest Symposium on Circuits and Systems, 2020

A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
A 32-48 GHz Differential YIG Oscillator With Low Phase Noise Based On a SiGe MMIC.
Proceedings of the IEEE Radio and Wireless Symposium, 2019

A Signal Source Chip at 140GHz and 160GHz for Radar Applications in a SiGe Bipolar Technology.
Proceedings of the 62nd IEEE International Midwest Symposium on Circuits and Systems, 2019

A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas.
IEEE J. Solid State Circuits, 2018

Integration of SiGe HBT with f<sub>T</sub>=305GHz, f<sub>max</sub>=537GHz in 130nm and 90nm CMOS.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit.
Microelectron. Reliab., 2017

2016
Advanced thermal simulation of SiGe: C HBTs including back-end-of-line.
Microelectron. Reliab., 2016

Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination.
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016

2015
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit.
Microelectron. Reliab., 2015

2014
SiGe BiCMOS technology and circuits for active safety systems.
Proceedings of the Technical Papers of 2014 International Symposium on VLSI Design, 2014

2013
Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systems.
Proceedings of the 2013 23rd International Workshop on Power and Timing Modeling, 2013

2012
A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO.
IEEE J. Solid State Circuits, 2012

2009
SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency.
IEEE J. Solid State Circuits, 2009

A low noise, high gain, highly linear mixer for 77 GHz automotive radar applications in SiGe: C bipolar technology.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2007
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology.
IEEE J. Solid State Circuits, 2007

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005
100-Gb/s 2<sup>7</sup>-1 and 54-Gb/s 2<sup>11</sup>-1 PRBS generators in SiGe bipolar technology.
IEEE J. Solid State Circuits, 2005

2004
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology.
IEEE J. Solid State Circuits, 2004

2001
2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology.
IEEE J. Solid State Circuits, 2001


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