Kiyoo Itoh

Affiliations:
  • Hitachi, Ltd., Tokyo, Japan


According to our database1, Kiyoo Itoh authored at least 42 papers between 1989 and 2012.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 1996, "For seminal and sustained contributions to high-density DRAMs.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2012
Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays.
IEICE Trans. Electron., 2012

0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs.
IEICE Trans. Electron., 2012

A Low-<i>V</i><sub>t</sub> Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing.
IEICE Trans. Electron., 2012

2011
Nanoscale Memory Repair
Integrated Circuits and Systems, Springer, ISBN: 978-1-4419-7958-2, 2011

Embedded Memories: Progress and a Look into the Future.
IEEE Des. Test Comput., 2011

Beyond the horizon: The next 10x reduction in power - Challenges and solutions.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

Device-conscious circuit designs for 0.5-V high-speed memory-rich nanoscale CMOS LSIs.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2010
Adaptive Circuits for the 0.5-V Nanoscale CMOS Era.
IEICE Trans. Electron., 2010

Variability-Conscious Circuit Designs for Low-Voltage Memory-Rich Nano-Scale CMOS LSIs.
Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, Optimization, and Simulation, 2010

2009
Adaptive circuits for the 0.5-V nanoscale CMOS era.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

Low-Vt small-offset gated preamplifier for sub-1V gigabit DRAM arrays.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

Leakage- and variability-conscious circuit designs for the 0.5-v nanoscale CMOS era.
Proceedings of the 2009 International Symposium on Low Power Electronics and Design, 2009

2008
Memory at VLSI Circuits Symposium.
IEEE J. Solid State Circuits, 2008

2007
Ultra-Low Voltage Nano-Scale Memories
Series on Integrated Circuits and Systems, Springer, ISBN: 978-0-387-68853-4, 2007

Long-Retention-Time, High-Speed DRAM Array with 12-<i>F</i><sup>2</sup> Twin Cell for Sub 1-V Operation.
IEICE Trans. Electron., 2007

Low-Voltage Limitations and Challenges of Memory-Rich Nano-Scale CMOS LSIs.
Proceedings of the 14th IEEE International Conference on Electronics, 2007

Low-Voltage Limitations and Challenges of Memory-Rich Nano-Scale CMOS LSIs.
Proceedings of the 14th IEEE International Conference on Electronics, 2007

Low-voltage limitations of deep-sub-100-nm CMOS LSIs: view of memory designers.
Proceedings of the 17th ACM Great Lakes Symposium on VLSI 2007, 2007

Low-voltage limitations of memory-rich nano-scale CMOS LSIs.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2006
A 0.5-V FD-SOI twin-cell DRAM with offset-free dynamic-V<sub><i>T</i></sub> sense amplifiers.
Proceedings of the 2006 International Symposium on Low Power Electronics and Design, 2006

Ultra-low voltage nano-scale embedded RAMs.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2004
Low-Voltage Embedded RAMs - Current Status and Future Trends.
Proceedings of the Integrated Circuit and System Design, 2004

Reviews and future prospects of low-voltage embedded RAMs.
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004

2003
Review and future prospects of low-voltage RAM circuits.
IBM J. Res. Dev., 2003

2002
A low-impedance open-bitline array for multigigabit DRAM.
IEEE J. Solid State Circuits, 2002

Trends in Ultralow-Voltage RAM Technology.
Proceedings of the Integrated Circuit Design. Power and Timing Modeling, 2002

Low-voltage memories for power-aware systems.
Proceedings of the 2002 International Symposium on Low Power Electronics and Design, 2002

2001
A multigigabit DRAM technology with 6F<sup>2</sup> open-bitline cell, distributed overdriven sensing, and stacked-flash fuse.
IEEE J. Solid State Circuits, 2001

Low-Voltage Embedded-RAM Technology: Present and Future.
Proceedings of the SOC Design Methodologies, 2001

1997
Limitations and challenges of multigigabit DRAM chip design.
IEEE J. Solid State Circuits, 1997

1995
Trends in low-power RAM circuit technologies.
Proc. IEEE, 1995

1994
Two-dimensional power-line selection scheme for low subthreshold-current multi-gigabit DRAM's.
IEEE J. Solid State Circuits, August, 1994

Subthreshold-current reduction circuits for multi-gigabit DRAM's.
IEEE J. Solid State Circuits, July, 1994

1993
A single 1.5-V digital chip for a 10<sup>6</sup> synapse neural network.
IEEE Trans. Neural Networks, 1993

1990
A 23-ns 1-Mb BiCMOS DRAM.
IEEE J. Solid State Circuits, October, 1990

A tunable CMOS-DRAM voltage limiter with stabilized feedback amplifier.
IEEE J. Solid State Circuits, October, 1990

Trends in megabit DRAM circuit design.
IEEE J. Solid State Circuits, June, 1990

1989
Substrate current reduction techniques for BiCMOS DRAM.
IEEE J. Solid State Circuits, October, 1989

A 1.5-V DRAM for battery-based applications.
IEEE J. Solid State Circuits, October, 1989

New DRAM noise generation under half-V<sub>cc</sub> precharge and its reduction using a transposed amplifier.
IEEE J. Solid State Circuits, August, 1989

Comparison of CMOS and BiCMOS 1-Mbit DRAM performance.
IEEE J. Solid State Circuits, June, 1989

A 1-Mbit BiCMOS DRAM using temperature-compensation circuit techniques.
IEEE J. Solid State Circuits, June, 1989


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