Kiyomi Naruke

According to our database, Kiyomi Naruke authored at least 5 papers between 1992 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

A 151-mm² 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology.

Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Takeshi Ogawa, Toshiaki Edahiro, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Yuka Furuta, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Rieko Tanaka, Hiromitsu Komai, Mai Muramoto, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara

IEEE J. Solid State Circuits, 2012

2011

A 151mm² 64Gb MLC NAND flash memory in 24nm CMOS technology.

Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara

Proceedings of the IEEE International Solid-State Circuits Conference, 2011

2002

A 44-mm² four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller.

Toru Tanzawa, Akira Umezawa, Tadayuki Taura, Hitoshi Shiga, Tokumasa Hara, Yoshinori Takano, Takeshi Miyaba, Naoya Tokiwa, Kentaro Watanabe, Hiroshi Watanabe, Kazunori Masuda, Kiyomi Naruke, Hideo Kato, Shigeru Atsumi

IEEE J. Solid State Circuits, 2002

1994

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation.

Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Kiyomi Naruke, Seiji Yamada, Yoichi Ohshima, Masamitsu Oshikiri, Yohei Hiura, Tomoko Yamane, Kuniyoshi Yoshikawa

IEEE J. Solid State Circuits, April, 1994

1992

A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure.

Akira Umezawa, Shigeru Atsumi, Masao Kuriyama, Hironori Banba, Ken-ichi Imamiya, Kiyomi Naruke, Seiji Yamada, Etsushi Obi, Masamitsu Oshikiri, Tomoko Suzuki, Sumio Tanaka

IEEE J. Solid State Circuits, November, 1992