Kikuo Yamabe

According to our database, Kikuo Yamabe authored at least 4 papers between 2013 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Verification of Copper Stress Migration Under Low Temperature Long Time Stress.

Hideya Matsuyama, Takashi Suzuki, Motoki Shiozu, Hideo Ehara, Takeshi Soeda, Hirokazu Hosoi, Masao Oshima, Kikuo Yamabe

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.

Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe

Microelectron. Reliab., 2017

2016

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor.

Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

Microelectron. Reliab., 2016

2013

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe

Microelectron. Reliab., 2013