Kijeong Han

According to our database, Kijeong Han authored at least 4 papers between 2019 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies.

Aditi Agarwal, Kijeong Han, B. Jayant Baliga

Proceedings of the 2020 Device Research Conference, 2020

2019

Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress.

Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs.

Aditi Agarwal, Kijeong Han, B. Jayant Baliga

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.

Aditi Agarwal, Kijeong Han, B. Jayant Baliga

Proceedings of the Device Research Conference, 2019