Kiichi Tachi

According to our database, Kiichi Tachi authored at least 3 papers between 2010 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2011

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.

Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst

Microelectron. Reliab., 2011

2010

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La₂O₃ gate dielectrics.

Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

SrO capping effect for La₂O₃/Ce-silicate gate dielectrics.

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010