Khalil Tamersit

Orcid: 0000-0002-1023-843X

According to our database1, Khalil Tamersit authored at least 10 papers between 2021 and 2024.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

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Bibliography

2024
Ultrasensitive Gas Nanosensor Based on Doping-less Carbon Nanotube Tunnel Field-Effect Transistor with a Sensitive Drain-Gate.
Proceedings of the IEEE Workshop on Complexity in Engineering, 2024

Negative Capacitance Junctionless Graphene Nanoribbon Tunneling FET as DNA Nanosensor: A Quantum Simulation-Based Proposal.
Proceedings of the IEEE Workshop on Complexity in Engineering, 2024

2022
Correction to "Leveraging Negative Capacitance CNTFETs for Image Processing: An Ultra-Efficient Ternary Image Edge Detection Hardware".
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

High-Performance Detection of Toxic Gases Using a New Microsensor based on Graphene Field-Effect Transistor.
Proceedings of the IEEE Workshop on Complexity in Engineering, 2022

High Photosensitivity in Band-to-Band Tunneling Regime of Carbon Nanotube Field-Effect Phototransistor: Numerical Investigation.
Proceedings of the IEEE Workshop on Complexity in Engineering, 2022

Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation.
Proceedings of the 19th International Multi-Conference on Systems, Signals & Devices, 2022

2021
Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Leveraging Negative Capacitance CNTFETs for Image Processing: An Ultra-Efficient Ternary Image Edge Detection Hardware.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021

Junctionless Carbon Nanotube Field-Effect Transistors as Gas Nanosensors for Low-Power Environment Monitoring Applications.
Proceedings of the 10th International Conference on Modern Circuits and Systems Technologies, 2021

Role of Underlap Structure in Boosting the Performance of Band-to-Band Tunneling Carbon Nanotube FET with 5-nm Gate Length.
Proceedings of the 10th International Conference on Modern Circuits and Systems Technologies, 2021


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