Kevin W. Kobayashi

Orcid: 0000-0001-6296-6845

According to our database1, Kevin W. Kobayashi authored at least 17 papers between 1994 and 2023.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2023
A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/P<sub>dc</sub> LFOM at 48 GHz.
IEEE J. Solid State Circuits, September, 2023

2022
High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2020
Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations.
IEEE J. Solid State Circuits, 2020

Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2016
A Novel 100 MHz-45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch 0.15~ μm GaN-SiC Wafer Process Technology.
IEEE J. Solid State Circuits, 2016

2012
An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3.
IEEE J. Solid State Circuits, 2012

2009
A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power.
IEEE J. Solid State Circuits, 2009

2007
Linearized Darlington Cascode Amplifier Employing GaAs PHEMT and GaN HEMT Technologies.
IEEE J. Solid State Circuits, 2007

1999
A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth.
IEEE J. Solid State Circuits, 1999

A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications.
IEEE J. Solid State Circuits, 1999

1998
A novel self-oscillating HEMT-HBT cascode VCO-mixer using an active tunable inductor.
IEEE J. Solid State Circuits, 1998

1996
A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier.
IEEE J. Solid State Circuits, 1996

A 5-10 GHz octave-band AlGaAs/GaAs HBT-Schottky diode down-converter MMIC.
IEEE J. Solid State Circuits, 1996

1994
InAlAs/InGaAs HBT X-band double-balanced upconverter.
IEEE J. Solid State Circuits, October, 1994

GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier.
IEEE J. Solid State Circuits, October, 1994


  Loading...