Kensuke Ota

According to our database1, Kensuke Ota authored at least 6 papers between 2016 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation.
Proceedings of the IEEE International Memory Workshop, 2022

2020
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016
BSIM4 parameter extraction for tri-gate Si nanowire transistors.
Microelectron. J., 2016


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