Ken Nakahara

According to our database, Ken Nakahara authored at least 11 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2024

Effect of the Conduction Resistance of SiC MOSFET on the Harmonics of Inverter Voltage in Wireless Power-Transfer Systems for Electric Vehicles.

Tatsuya Yanagi, Ken Nakahara, Hayato Sumiya, Sakahisa Nagai, Osamu Shimizu, Hiroshi Fujimoto

IEEE Access, 2024

2022

An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications.

Masayoshi Yamamoto, Shinya Shirai, Senanayake Thilak, Jun Imaoka, Ryosuke Ishido, Yuta Okawauchi, Ken Nakahara

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2022

2021

Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs.

Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara

Proceedings of the 30th IEEE International Symposium on Industrial Electronics, 2021

2020

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si.

Taketoshi Tanaka, Norikazu Ito, Shinya Takado, Masaaki Kuzuhara, Ken Nakahara

IEICE Trans. Electron., 2020

Magnetic Near-Field Strength Prediction of a Power Module by Measurement-Independent Modeling of Its Structure.

Junichi Kashiwagi, Hiroyuki Sakairi, Hirotaka Otake, Yusuke Nakakohara, Ken Nakahara

IEEE Access, 2020

Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs.

Yohei Nakamura, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara, Michihiro Shintani, Takashi Sato

Proceedings of the 29th IEEE Asian Test Symposium, 2020

2019

Hysteretic Control Embedded Boost Converter Operating at 25-MHz Switching.

Junichi Kashiwagi, Atsushi Yamaguchi, Yohei Moriyama, Ken Nakahara

IEEE Trans. Circuits Syst. II Express Briefs, 2019

Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs.

Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Kentaro Chikamatsu, Ken Nakahara

Proceedings of the IEEE International Conference on Industrial Technology, 2019

2018

A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency.

Tatsuya Miyazaki, Hirotaka Otake, Yusuke Nakakohara, Mamoru Tsuruya, Ken Nakahara

IEEE Trans. Ind. Electron., 2018

2016

Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation.

Yusuke Nakakohara, Hirotaka Otake, Tristan M. Evans, Tomohiko Yoshida, Mamoru Tsuruya, Ken Nakahara

IEEE Trans. Ind. Electron., 2016

2015

High-speed gate drive circuit for SiC MOSFET by GaN HEMT.

Kohei Nagaoka, Kentaro Chikamatsu, Atsushi Yamaguchi, Ken Nakahara, Takashi Hikihara

IEICE Electron. Express, 2015