Kelson D. Chabak

According to our database, Kelson D. Chabak authored at least 6 papers between 2016 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates.

Adam Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, Daniel Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green

Proceedings of the Device Research Conference, 2023

The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation.

S. Ahmed, A. E. Islam, Daniel Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green

Proceedings of the Device Research Conference, 2023

2022

Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates.

Ahmad Islam, Adam Miesle, M. Dietz, Kevin D. Leedy, S. Ganguli, G. Subramanyam, Weisong Wang, Nicholas Sepelak, Daniel Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak

Proceedings of the Device Research Conference, 2022

2021

Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing.

A. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak

Proceedings of the Device Research Conference, 2021

2019

Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs.

Kyle J. Liddy, Nolan S. Hendricks, Andrew J. Green, Andreas Popp, Miles T. Lindquist, Kevin D. Leedy, Stephen E. Tetlak, Neil A. Moser, Günter Wagner, Kelson D. Chabak, Gregg H. Jessen

Proceedings of the Device Research Conference, 2019

2016

Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

Kelson D. Chabak

PhD thesis, 2016