Keisaku Yamada

According to our database, Keisaku Yamada authored at least 4 papers between 2011 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2014

2012

Effect of substrate bias on frequency dependence of MOSFET noise intensity.

Kenji Ohmori, Ranga Hettiarachchi, Keisaku Yamada

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.

Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2011

Si nanowire FET and its modeling.

Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet

Sci. China Inf. Sci., 2011