Keiichi Maekawa

According to our database, Keiichi Maekawa authored at least 5 papers between 2014 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2019

A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications.

Ken Matsubara, Tsutomu Nagasawa, Yoshinobu Kaneda, Hidenori Mitani, Hiroshi Sato, Takashi Iwase, Yasunobu Aoki, Keiichi Maekawa, Hideaki Yamakoshi, Takashi Ito, Hiroyuki Kondo, Takashi Kono

Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019

2015

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM.

Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada, Yasuhiro Ogasahara

IEEE Micro, 2015

0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM.

Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Yasuhiro Ogasahara, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada

Proceedings of the 2015 IEEE Symposium in Low-Power and High-Speed Chips, 2015

2014

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology.

Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa

Proceedings of the 2014 IEEE Symposium on Low-Power and High-Speed Chips, 2014

40 nm Dual-port and two-port SRAMs for automotive MCU applications under the wide temperature range of -40 to 170°C with test screening against write disturb issues.

Yoshisato Yokoyama, Yuichiro Ishii, Koji Tanaka, Tatsuya Fukuda, Yoshiki Tsujihashi, Atsushi Miyanishi, Shinobu Asayama, Keiichi Maekawa, Kazutoshi Shiba, Koji Nii

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014