Kedar Janardan Dhori

According to our database1, Kedar Janardan Dhori authored at least 11 papers between 2014 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2022
Retention Problem Free High Density 4T SRAM cell with Adaptive Body Bias in 18nm FD-SOI.
Proceedings of the 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems, 2022

40nm Ultra-low Leakage SRAM with Embedded Sub-threshold Analog Closed Loop System for Efficient Source Biasing of the Memory Array in Retention Mode.
Proceedings of the 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems, 2022

3-Stage Pipelined Hierarchical SRAMs with Burst Mode Read in 65nm LSTP CMOS.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

2021
Charge Scavenging Gate Coupled Hierarchical Bitline Scheme for Ultra-Low Power SRAMs in 65nm LSTP CMOS.
Proceedings of the 28th IEEE International Conference on Electronics, 2021

Circuit Monitoring Across Design Life-Cycle in 28nm FD-SOI and 40nm Bulk CMOS technologies.
Proceedings of the 47th ESSCIRC 2021, 2021

2020
Diagnostic Circuit for Latent Fault Detection in SRAM Row Decoder.
Proceedings of the 21st International Symposium on Quality Electronic Design, 2020

2017
High-yield design of high-density SRAM for low-voltage and low-leakage operations.
Proceedings of the IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2017

2016
Temperature-based adaptive memory sub-system in 28nm UTBB FDSOI.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016

2015
A CMOS 90nm 50Mhz Supply Noise Tolerant High Density 8T-NAND ROM.
Proceedings of the 28th International Conference on VLSI Design, 2015

A 6T-SRAM in 28nm FDSOI technology with Vmin of 0.52V using assisted read and write operation.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014
Write Assist Circuit to Cater Reliability and Floating Bit Line Problem of Negative Bit Line Assist Technique for Single or Multiport Static Random Access Memory.
IEEE Trans. Very Large Scale Integr. Syst., 2014


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