Kazumi Ino
According to our database1,
Kazumi Ino
authored at least 3 papers
between 2008 and 2012.
Collaborative distances:
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Bibliography
2012
A 19nm 112.8mm<sup>2</sup> 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2008
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008