Kazukiyo Joshin

According to our database, Kazukiyo Joshin authored at least 8 papers between 2003 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.

Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin

IEICE Trans. Electron., 2017

2015

High-Speed Optical and Millimeter-Wave Wireless Link for Disaster Recovery.

Ken-ichi Kitayama, Yuki Yoshida, Yuya Yamaguchi, Hirochika Nakajima, Kohsuke Nishimura, Abdelmoula Bekkali, Masayuki Oishi, Hidenori Iwai, Kazuya Ota, Norihiko Sato, Naoyasu Kamiya, Keiji Tanaka, Yoichi Oikawa, Kazukiyo Joshin, Nobuhiko Shibagaki, Kaoru Higuma, Satoshi Oikawa, Junichiro Ichikawa, Atsushi Kanno, Tetsuya Kawanishi

Proceedings of the 2015 IEEE Globecom Workshops, San Diego, CA, USA, December 6-10, 2015, 2015

2014

Millimeter-Wave GaN HEMT for Power Amplifier Applications.

Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe

IEICE Trans. Electron., 2014

2009

A 77GHz transceiver in 90nm CMOS.

Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

Special Section on Microwave and Millimeter-wave Technologies.

Kazukiyo Joshin

IEICE Trans. Electron., 2008

60 and 77GHz Power Amplifiers in Standard 90nm CMOS.

Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2006

High Power GaN-HEMT for Wireless Base Station Applications.

Toshihide Kikkawa, Kazukiyo Joshin

IEICE Trans. Electron., 2006

2003

An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system.

Satoshi Masuda, Tsuyoshi Takahashi, Kazukiyo Joshin

IEEE J. Solid State Circuits, 2003