Katja Waschneck

Orcid: 0000-0001-7875-3270

Affiliations:

Infineon Technologies AG, Neubiberg, Germany

According to our database¹, Katja Waschneck authored at least 8 papers between 2018 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

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Bibliography

2024

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

From Device Aging Physics to Automated Circuit Reliability Sign Off.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.

[BibT_eX]

[DOI]

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Katja Waschneck

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