Kathryn M. Neilson

According to our database, Kathryn M. Neilson authored at least 3 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches.

Jung-Soo Ko, Alex Shearer, Sol Lee, Kathryn M. Neilson, Marc Jaikissoon, Kwanpyo Kim, Stacey Bent, Krishna Saraswat, Eric Pop

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm²) and Low Resistance Drift (~0.002 at 105°C).

Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M. Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H.-S. Philip Wong, Kenneth E. Goodson, Eric Pop

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers.

Marc Jaikissoon, Jerry A. Yang, Kathryn M. Neilson, Eric Pop, Krishna C. Saraswat

Proceedings of the Device Research Conference, 2022