Karim Cherkaoui

According to our database, Karim Cherkaoui authored at least 4 papers between 2007 and 2009.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2009

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.

Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley

Microelectron. Reliab., 2009

2007

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO₂/HfO₂/TiN gate stacks.

Paul K. Hurley, Karim Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland

Microelectron. Reliab., 2007

Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films.

Richard A. Farrell, Karim Cherkaoui, Nikolay Petkov, Heinz Amenitsch, Justin D. Holmes, Paul K. Hurley, Michael A. Morris

Microelectron. Reliab., 2007

Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation.

Octavian Buiu, Steve Hall, Olof Engström, B. Raeissi, Max Christian Lemme, Paul K. Hurley, Karim Cherkaoui

Microelectron. Reliab., 2007