Karen Geens
Orcid: 0000-0003-1815-3972
According to our database1,
Karen Geens
authored at least 5 papers
between 2019 and 2023.
Collaborative distances:
Collaborative distances:
Timeline
2019
2020
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2022
2023
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Bibliography
2023
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2020
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
IEICE Electron. Express, 2019