Kaito Hikake

According to our database, Kaito Hikake authored at least 3 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration-ALD Material Engineering, High-Field Transport, Statistical Variability.

Kaito Hikake, Xingyu Huang, Sung-Hun Kim, Kota Sakai, Zhuo Li, Tomoko Mizutani, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited).

Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.

Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023