K. Rousseau

According to our database, K. Rousseau authored at least 1 paper in 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.

Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux

Microelectron. Reliab., 2017