K. Ketata

According to our database, K. Ketata authored at least 8 papers between 2004 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2007

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests.

Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon

Microelectron. Reliab., 2007

Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses.

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter

Microelectron. Reliab., 2007

Reliability study of power RF LDMOS device under thermal stress.

Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon

Microelectron. J., 2007

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET.

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter

Microelectron. J., 2007

2006

Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.

Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline

Microelectron. Reliab., 2006

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.

Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon

Microelectron. Reliab., 2006

2005

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.

Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon

Microelectron. Reliab., 2005

2004

Reliability study of Power RF LDMOS for Radar Application.

Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata

Microelectron. Reliab., 2004