K. Daoud

According to our database, K. Daoud authored at least 7 papers between 2009 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

Performance drifts of N-MOSFETs under pulsed RF life test.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry

Microelectron. Reliab., 2014

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests.

Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry

Microelectron. J., 2014

2012

Failure analysis of hot-electron effect on power RF N-LDMOS transistors.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

2011

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Microelectron. Reliab., 2011

2010

Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors.

Mohamed Ali Belaïd, K. Daoud

Microelectron. Reliab., 2010

Characteristics degradation of the SiGe HBT under electromagnetic field stress.

A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun

Microelectron. Reliab., 2010

2009

Effects of electromagnetic near-field stress on SiGe HBT's reliability.

A. Alaeddine, M. Kadi, K. Daoud, B. Mazari

Microelectron. Reliab., 2009