K. B. Noh

According to our database, K. B. Noh authored at least 3 papers between 2013 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Assessment of SiGe quantum well transistors for DRAM peripheral applications.

Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.

Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2013

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh

Proceedings of the European Solid-State Device Research Conference, 2013