Junji Cheng

According to our database, Junji Cheng authored at least 12 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Modeling and simulation of an insulated-gate HEMT using p-SnO₂ gate for high V_TH design.

Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang

Microelectron. J., September, 2023

Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison.

Zonghao Zhang, Xi Wang, Keqiang Ma, Siliang Wang, Chenxing Wang, Haoyang Zhou, Haimeng Huang, Junji Cheng, Bo Yi, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.

Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

2021

A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp.

Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang

Proceedings of the 14th IEEE International Conference on ASIC, 2021

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.

Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer.

Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang

IEICE Electron. Express, 2020

Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance.

Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi

IEEE Access, 2020

2019

SiC trench MOSFET with integrated side-wall Schottky barrier diode having P⁺ electric field shield.

Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong

IEICE Electron. Express, 2019

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor.

Jingjie Lin, Ping Li, Junji Cheng, Jiayu Wu, Bo Yi, Xingbi Chen

IEICE Electron. Express, 2019

Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices.

Haimeng Huang, Jun Huang, Huan Hu, Junji Cheng, Bo Yi

IEEE Access, 2019

2018

Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions.

Junji Cheng, Ping Li, Weizhen Chen, Bo Yi, Xingbi Chen

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Simulation study on the high-k SJ-VDMOS with gradient side-wall.

Weizhen Chen, Junji Cheng, Jingjie Lin, Xingbi Chen

Proceedings of the 41st International Convention on Information and Communication Technology, 2018