Junghyeon Hwang

According to our database, Junghyeon Hwang authored at least 5 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2024

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security.

Sehee Lim, Junghyeon Hwang, Dong Han Ko, Se Keon Kim, Tae Woo Oh, Sanghun Jeon, Seong-Ook Jung

IEEE Internet Things J., 2024

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.

Venkateswarlu Gaddam, Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices.

Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung

IEEE J. Solid State Circuits, 2023

Ultra-high Tunneling Electroresistance Ratio (2 × 10⁴) & Endurance (10⁸) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 10³) Ferroelectric Tunnel Junction.

Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF.

Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022