JungChak Ahn
Affiliations:- Samsung, Seoul, South Korea
According to our database1,
JungChak Ahn
authored at least 24 papers
between 2004 and 2023.
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Bibliography
2023
Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range.
Sensors, November, 2023
A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory.
IEEE J. Solid State Circuits, 2022
A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10, 000e- by Dual Vertical Transfer Gate Technology.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
World's first 16: 4: 1 triple conversion gain sensor with all-pixel AF for 82.4dB single exposure HDR.
Proceedings of the Imaging Sensors and Systems 2022, online, January 15-26, 2022, 2022
2021
A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation.
IEEE J. Solid State Circuits, 2021
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
Proceedings of the Imaging Sensors and Systems 2021, online, January 11-28, 2021, 2021
A Low-Voltage 0.7 µm Pixel with 6000 e- Full-Well Capacity for a Low-Power CMOS Image Sensor.
Proceedings of the Imaging Sensors and Systems 2021, online, January 11-28, 2021, 2021
2020
5.5 A 2.1e<sup>-</sup> Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2014
7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor.
Proceedings of the Sensors, 2013
2012
Proceedings of the 10th IEEE International NEWCAS Conference, 2012
2011
A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
Proceedings of the IEEE International Solid-State Circuits Conference, 2010
2006
1/2-inch 7.2MPixel CMOS Image Sensor with 2.25µm Pixels Using 4-Shared Pixel Structure for Pixel-Level Summation.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
2004
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements.
Microelectron. Reliab., 2004