Jung-Soo Ko

According to our database, Jung-Soo Ko authored at least 5 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches.

Jung-Soo Ko, Alex Shearer, Sol Lee, Kathryn M. Neilson, Marc Jaikissoon, Kwanpyo Kim, Stacey Bent, Krishna Saraswat, Eric Pop

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2.

Jung-Soo Ko, Zichen Zhang, Sol Lee, Marc Jaikissoon, Robert K. A. Bennett, Kwanpyo Kim, Andrew C. Kummel, Prabhakar Bandaru, Eric Pop, Krishna C. Saraswat

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal.

Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat

Proceedings of the Device Research Conference, 2023

2022

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation.

Sumaiya Wahid, Alwin Daus, Jimin Kwon, Shengjun Qin, Jung-Soo Ko, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop

Proceedings of the Device Research Conference, 2022

Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties.

Lauren Hoang, Alwin Daus, Sumaiya Wahid, Jimin Kwon, Jung-Soo Ko, Shengjun Qin, Mahnaz Islam, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop

Proceedings of the Device Research Conference, 2022