Jung-No Im

According to our database, Jung-No Im authored at least 2 papers between 2012 and 2016.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2016

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.

Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2012

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology.

Daeyeal Lee, Ik Joon Chang, Sangyong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park, Doo-Gon Kim, Chiweon Yoon, Bong-Soon Lim, ByungJun Min, Sung-Won Yun, Ji-Sang Lee, Il-Han Park, Kyung-Ryun Kim, Jeong-Yun Yun, Youse Kim, Yong-Sung Cho, Kyung-Min Kang, Sang-Hyun Joo, Jin-Young Chun, Jung-No Im, Seunghyuk Kwon, Seokjun Ham, Ansoo Park, Jae-Duk Yu, Nam-Hee Lee, Tae-Sung Lee, Moosung Kim, Hoosung Kim, Ki-Whan Song, Byung-Gil Jeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012