Josef Bock

According to our database, Josef Bock authored at least 16 papers between 1996 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Integration of SiGe HBT with f_T=305GHz, f_max=537GHz in 130nm and 90nm CMOS.

Dirk Manger, Wolfgang Liebl, S. Boguth, B. Binder, Klaus Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, Josef Boeck

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

SiGe BiCMOS Current Status and Future Trends in Europe.

Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap.

Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Böck, Anindya Mukherjee

Proc. IEEE, 2017

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.

Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer

Proc. IEEE, 2017

Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit.

C. Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Boeck, Klaus Aufinger, Cristell Maneux

Microelectron. Reliab., 2017

2016

Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations.

C. Mukherjee, Thomas Jacquet, Thomas Zimmer, Cristell Maneux, Anjan Chakravorty, Josef Boeck, Klaus Aufinger

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2009

Dielectric thinning model applied to metal insulator metal capacitors with Al₂O₃ dielectric.

K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner

Microelectron. Reliab., 2009

2007

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology.

Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz

IEEE J. Solid State Circuits, 2007

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar.

Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology.

Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005

100-Gb/s 2⁷-1 and 54-Gb/s 2¹¹-1 PRBS generators in SiGe bipolar technology.

Herbert Knapp, Martin Wurzer, Werner Perndl, Klaus Aufinger, Josef Böck, Thomas F. Meister

IEEE J. Solid State Circuits, 2005

2004

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz.

Hao Li, Hans-Martin Rein, Thomas Suttorp, Josef Böck

IEEE J. Solid State Circuits, 2004

2002

38 GHz low-power static frequency divider in SiGe bipolar technology.

Günter Ritzberger, Josef Böck, Herbert Knapp, Ludwig Treitinger, Arpad L. Scholtz

Proceedings of the 2002 International Symposium on Circuits and Systems, 2002

2001

2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology.

Herbert Knapp, Josef Böck, Martin Wurzer, Günter Ritzberger, Klaus Aufinger, Ludwig Treitinger

IEEE J. Solid State Circuits, 2001

1999

A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz f_T silicon bipolar technology.

Martin Wurzer, Josef Böck, Herbert Knapp, Wolfgang Zirwas, Fritz Schumann, Alfred Felder

IEEE J. Solid State Circuits, 1999

1996

46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology.

Alfred Felder, Michael Möller, Josef Popp, Josef Böck, Hans-Martin Rein

IEEE J. Solid State Circuits, 1996