José Millán

According to our database, José Millán authored at least 20 papers between 2001 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Power cycling analysis method for high-voltage SiC diodes.

Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon

Microelectron. Reliab., 2016

2015

SiC Integrated Circuit Control Electronics for High-Temperature Operation.

Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon

IEEE Trans. Ind. Electron., 2015

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.

Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.

Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.

Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán

Proceedings of the European Solid-State Device Research Conference, 2013

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.

Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán

Proceedings of the ESSCIRC 2013, 2013

2012

Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens

Microelectron. Reliab., 2012

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.

Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán

Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2008

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress.

Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán

Microelectron. Reliab., 2008

2007

Coupled electro-thermal simulation of a DC/DC converter.

Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán

Microelectron. Reliab., 2007

Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles.

X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán

Microelectron. Reliab., 2007

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities.

X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán

Microelectron. Reliab., 2007

Wide band-gap power semiconductor devices.

José Millán

IET Circuits Devices Syst., 2007

2006

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current.

X. Perpiñà, Jean-François Serviere, J. Saiz, Davide Barlini, Michel Mermet-Guyennet, José Millán

Microelectron. Reliab., 2006

2004

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.

Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán

Microelectron. J., 2004

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán

Microelectron. J., 2004

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán

Microelectron. J., 2004

2002

Reduction of self-heating effect on SOIM devices.

Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán

Microelectron. Reliab., 2002

2001

The electron irradiation effects on silicon gate dioxide used for power MOS devices.

Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu

Microelectron. Reliab., 2001