Jordi Suñé
Orcid: 0000-0003-0108-4907
According to our database1,
Jordi Suñé
authored at least 19 papers
between 2001 and 2021.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2010, "For contributions to the understanding of gate oxide failure and reliability methodology".
Timeline
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On csauthors.net:
Bibliography
2021
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition.
Proceedings of the 12th IEEE Latin America Symposium on Circuits and System, 2021
2020
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition.
IEEE Access, 2020
2018
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory.
Microelectron. Reliab., 2018
SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions.
Int. J. Circuit Theory Appl., 2018
2017
Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2017
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis.
Microelectron. Reliab., 2017
Equivalent circuit model for the electron transport in 2D resistive switching material systems.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2015
Electrical characterization of multiple leakage current paths in HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>-based nanolaminates.
Microelectron. Reliab., 2015
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films.
Microelectron. Reliab., 2015
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Single-parameter model for the post-breakdown conduction characteristics of HoTiO<sub>x</sub>-based MIM capacitors.
Microelectron. Reliab., 2014
2013
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.
Microelectron. Reliab., 2013
Microelectron. Reliab., 2013
2012
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012
2005
Microelectron. Reliab., 2005
2004
Electron transport through broken down ultra-thin SiO<sub>2</sub> layers in MOS devices.
Microelectron. Reliab., 2004
2003
Critical reliability challenges in scaling SiO<sub>2</sub>-based dielectric to its limit.
Microelectron. Reliab., 2003
Microelectron. Reliab., 2003
2001
Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets.
VLSI Design, 2001