Joong-Won Shin

According to our database, Joong-Won Shin authored at least 8 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO₂ Gate Insulator for Analog Memory Application.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2023

Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition.

Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin

Proceedings of the Device Research Conference, 2023

2022

The Effect of Inter Layers on the Ferroelectric Undoped HfO₂ Formation.

Masakazu Tanuma, Joong-Won Shin, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2022

MFSFET with 5nm Thick Ferroelectric Nondoped HfO₂ Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2022

Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation.

Joong-Won Shin, Masakazu Tanuma, J. Pyo, Shun'ichiro Ohmi

Proceedings of the Device Research Conference, 2022

MFSFET with Ferroelectric HfN for Analog Memory Application.

Shun'ichiro Ohmi, Akio Ihara, Masakazu Tanuma, Jooyoung Pyo, Joong-Won Shin

Proceedings of the Device Research Conference, 2022

2021

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

Proceedings of the Device Research Conference, 2021

2018

Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.

Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2018