Joong-Seob Yang

According to our database, Joong-Seob Yang authored at least 3 papers between 2009 and 2011.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2011

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS.

Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Heejoung Park, Joong-Seob Yang, Yo-Hwan Koh

IEEE J. Solid State Circuits, 2011

2010

A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS.

Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Joong-Seob Yang, Yo-Hwan Koh

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput.

Seung-Ho Chang, Sok-Kyu Lee, Seong-Je Park, Min-Joong Jung, Jung-Chul Han, In-Soo Wang, Kyu-Hee Lim, Jung-Hwan Lee, Ji-Hwan Kim, Won-Kyung Kang, Tai-Kyu Kang, Hee-Su Byun, Yujong Noh, Lee-Hyun Kwon, Bon-Kwang Koo, Myung Cho, Joong-Seob Yang, Yo-Hwan Koh

Proceedings of the IEEE International Solid-State Circuits Conference, 2009