Jong Tae Park

Affiliations:

Incheon National University (INU), Department of Electronics Engineering, Republic of Korea
University of Incheon (UI), Department of Electronics Engineering, Republic of Korea

According to our database¹, Jong Tae Park authored at least 33 papers between 2003 and 2018.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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In proceedings

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PhD thesis

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Links

On csauthors.net:

Bibliography

2018

Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Thermal energy harvesting circuit with maximum power point tracking control for self-powered sensor node applications.

[BibT_eX]

[DOI]

Eun-Jung Yoon

Jong-Tae Park

Chong-Gun Yu

Frontiers Inf. Technol. Electron. Eng., 2018

2017

Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

2016

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors.

[BibT_eX]

[DOI]

Hyun Jun Jang

Chong-Gun Yu

Jong Tae Park

Microelectron. Reliab., 2016

Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory.

[BibT_eX]

[DOI]

Jin Hyung Choi

Chong-Gun Yu

Jong Tae Park

Microelectron. Reliab., 2016

2015

Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination.

[BibT_eX]

[DOI]

Dae Hyun Kim

Jong Tae Park

Microelectron. Reliab., 2015

Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs.

[BibT_eX]

[DOI]

Jin Hyung Choi

Jong Tae Park

Microelectron. Reliab., 2015

2014

Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress.

[BibT_eX]

[DOI]

Jae Hoon Lee

Jong Tae Park

Microelectron. Reliab., 2014

The effect of gate overlap on the device degradation in IGZO thin film transistors.

[BibT_eX]

[DOI]

Dae Hyun Kim

Jong Tae Park

Microelectron. Reliab., 2014

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

2013

Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors.

[BibT_eX]

[DOI]

Seung Min Lee

Hyun Jun Jang

Jong Tae Park

Microelectron. Reliab., 2013

A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

2012

Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

2011

Concurrent PBTI and hot carrier degradation in n-channel MuGFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

Effects of device layout on the drain breakdown voltages in MuGFETs.

[BibT_eX]

[DOI]

Jin-Young Kim

Chong-Gun Yu

Jong Tae Park

Microelectron. Reliab., 2011

2010

The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation.

[BibT_eX]

[DOI]

Dong Wook Kim

Woo Sang Park

Jong Tae Park

Microelectron. Reliab., 2010

NBTI and hot carrier effect of Schottky-barrier p-MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

2009

NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

2007

Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2007

2006

New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2006

2005

Reliability improvement by the suppression of keyhole generation in W-plug vias.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2005

2004

Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2004

Effects of hot carrier stress on the RF performance in SOI MOSFETs.

[BibT_eX]

[DOI]

Byung-Jin Lee

Kyosun Kim

Jong Tae Park

Microelectron. Reliab., 2004

2003

Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2003

Increased hot carrier effects in Gate-All-Around SOI nMOSFET's.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2003

Jong Tae Park

Timeline

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On csauthors.net:

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