Jong Mun Park

According to our database, Jong Mun Park authored at least 9 papers between 2003 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2017

Optical sensor process variability in a 0.18 μm high voltage CMOS technology.

Frederic Roger, Anderson Pires Singulani, Jong Mun Park

Proceedings of the 27th International Symposium on Power and Timing Modeling, 2017

2011

An analytical approach for physical modeling of hot-carrier induced degradation.

Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2011

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2010

2008

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.

Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems

IET Circuits Devices Syst., 2008

2007

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.

Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer

Microelectron. Reliab., 2007

2006

Evolution of a CMOS Based Lateral High Voltage Technology Concept.

Martin Knaipp, Jong Mun Park, Verena Vescoli

Microelectron. J., 2006

2005

A method for generating structurally aligned grids for semiconductor device simulation.

Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2005

2004

High-voltage lateral trench gate SOI-LDMOSFETs.

Jong Mun Park, Robert Klima, Siegfried Selberherr

Microelectron. J., 2004

2003

Improving SiC lateral DMOSFET reliability under high field stress.

Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr

Microelectron. Reliab., 2003