John J. Pekarik

According to our database1, John J. Pekarik authored at least 16 papers between 2004 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2022
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2012
A frequency-selective nested dual-loop broadband low-noise amplifier in 90 nm CMOS.
Proceedings of the 38th European Solid-State Circuit conference, 2012

2010
A 34dB SNDR instantaneously-companding baseband SC filter for 802.11a/g WLAN receivers.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010

A 60GHz-band 2×2 phased-array transmitter in 65nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010

A 900μW, 3-5GHz integrated FM-UWB transmitter in 90nm CMOS.
Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009
A 150 GHz Amplifier With 8 dB Gain and +6 dBm P<sub>sat</sub> in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines.
IEEE J. Solid State Circuits, 2009

A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008
A 56-to-65GHz Injection-Locked Frequency Tripler with Quadrature Outputs in 90nm CMOS.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

A UWB transformer-C orthonormal state space band-reject filter in 0.13 μm CMOS.
Proceedings of the ESSCIRC 2008, 2008

2007
A 23-to-29GHz Differentially Tuned Varactorless VCO in 0.13μm CMOS.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

2004
RFCMOS technology from 0.25μm to 65nm: the state of the art.
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004


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