John Golz

According to our database, John Golz authored at least 8 papers between 2005 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

80-kb Logic Embedded High-K Charge Trap Transistor-Based Multi-Time-Programmable Memory With No Added Process Complexity.

Balaji Jayaraman, Derek Leu, Janakiraman Viraraghavan, Alberto Cestero, Ming Yin, John Golz, Rajesh Reddy Tummuru, Ramesh Raghavan, Dan Moy, Thejas Kempanna, Faraz Khan, Toshiaki Kirihata, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2018

2016

Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias.

Toshiaki Kirihata, John Golz, Matthew R. Wordeman, Pooja Batra, Gary W. Maier, Norman Robson, Troy L. Graves-abe, Daniel Berger, Subramanian S. Iyer

IEEE J. Emerg. Sel. Topics Circuits Syst., 2016

OfftargetFinder: a web tool for species-specific RNAi design.

Robert T. Good, Temi Varghese, John Golz, Derek A. Russell, Alexie Papanicolaou, Owain Edwards, Charles Robin

Bioinform., 2016

80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity.

Janakiraman Viraraghavan, Derek Leu, Balaji Jayaraman, Alberto Cestero, Robert Kilker, Ming Yin, John Golz, Rajesh Reddy Tummuru, Ramesh Raghavan, Dan Moy, Thejas Kempanna, Faraz Khan, Toshiaki Kirihata, Subramanian S. Iyer

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2009

A 1 MB Cache Subsystem Prototype With 1.8 ns Embedded DRAMs in 45 nm SOI CMOS.

Peter J. Klim, John Barth, William R. Reohr, David Dick, Gregory Fredeman, Gary Koch, Hien M. Le, Aditya Khargonekar, Pamela Wilcox, John Golz, Jente B. Kuang, Abraham Mathews, Jethro C. Law, Trong Luong, Hung C. Ngo, Ryan Freese, Hillery C. Hunter, Erik Nelson, Paul C. Parries, Toshiaki Kirihata, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2009

2008

A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier.

John Barth, William R. Reohr, Paul C. Parries, Gregory Fredeman, John Golz, Stanley Schuster, Richard E. Matick, Hillery C. Hunter, Charles Tanner, Joseph Harig, Hoki Kim, Babar A. Khan, John Griesemer, Robert Havreluk, Kenji Yanagisawa, Toshiaki Kirihata, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2008

2007

A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier.

John Barth, William R. Reohr, Paul C. Parries, Gregory Fredeman, John Golz, Stanley Schuster, Richard E. Matick, Hillery C. Hunter, Charles Tanner, Joseph Harig, Hoki Kim, Babar A. Khan, John Griesemer, Robert Havreluk, Kenji Yanagisawa, Toshiaki Kirihata, Subramanian S. Iyer

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

2005

An 800-MHz embedded DRAM with a concurrent refresh mode.

Toshiaki Kirihata, Paul C. Parries, David R. Hanson, Hoki Kim, John Golz, Gregory Fredeman, Raj Rajeevakumar, John Griesemer, Norman Robson, Alberto Cestero, Babar A. Khan, Geng Wang, Matt Wordeman, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2005