John A. Ott

According to our database, John A. Ott authored at least 1 paper in 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.

Pouya Hashemi, Takashi Ando, Karthik Balakrishnan, John Bruley, Sebastian U. Engelmann, John A. Ott, Vijay Narayanan, D.-G. Park, Renee T. Mo, Effendi Leobandung

Proceedings of the Symposium on VLSI Circuits, 2015