Johan Bourgeat

According to our database, Johan Bourgeat authored at least 10 papers between 2010 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI.

Thalis Da C. Guedes, Johan Bourgeat, Manuel J. Barragán, Jean-Marc Duchamp, Philippe Ferrari

Proceedings of the 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design, 2024

2021

Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements.

Chloe Troussier, Johan Bourgeat, Blaise Jacquier, Emmanuel Simeu, Jean-Daniel Arnould

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2014

New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology.

Philippe Galy, J. Bourgeat, D. Marin-Cudraz

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013

Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application.

Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier

Microelectron. Reliab., 2013

2012

Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology.

Philippe Galy, Johan Bourgeat, Jean Jimenez, Nicolas Guitard, Alexandre Dray, Ghislain Troussier, Blaise Jacquier, David Marin-Cudraz

Microelectron. Reliab., 2012

High swing low capacitance ESD RF protections in advanced CMOS technologies.

Jean Jimenez, Philippe Galy, Johan Bourgeat, Boris Heitz

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

BIMOS transistor and its applications in ESD protection in advanced CMOS technology.

Philippe Galy, Jean Jimenez, Johan Bourgeat, A. Dray, Ghislain Troussier, Boris Heitz, Nicolas Guitard, David Marin-Cudraz, H. Beckrich-Ros

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2011

Reliability impact due to high current, lattice and hot carriers temperatures on β^(2×2) matrix ESD power devices for advanced CMOS technologies.

Philippe Galy, J. Bourgeat, Jean Jimenez, Blaise Jacquier, D. Marin-Cudraz, Sylvain Dudit

Microelectron. Reliab., 2011

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node.

J. Bourgeat, Philippe Galy, A. Dray, Jean Jimenez, D. Marin-Cudraz, Blaise Jacquier

Microelectron. Reliab., 2011

2010

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm.

J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz

Microelectron. Reliab., 2010